SI2333CDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Terminal Position :

Dual

Resistance :

35mOhm

Number of Pins :

3

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

Mounting Type :

Surface Mount

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

8V

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Power Dissipation :

1.25W

Continuous Drain Current (ID) :

5.1A

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

7.1A Tc

Mount :

Surface Mount

Width :

1.397mm

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±8V

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Number of Elements :

1

Turn On Delay Time :

13 ns

Rise Time :

35ns

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

1225pF @ 6V

Length :

3.0226mm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

35m Ω @ 5.1A, 4.5V

Fall Time (Typ) :

35 ns

Drain to Source Breakdown Voltage :

-12V

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

1.25W Ta 2.5W Tc

Package / Case :

TO-236-3, SC-59, SOT-23-3

Weight :

1.437803g

Turn-Off Delay Time :

45 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Threshold Voltage :

-400mV

Height :

1.016mm

Drain to Source Voltage (Vdss) :

12V

JESD-609 Code :

e3