SI2329DS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

-5.3A

Drain Current-Max (Abs) (ID) :

6A

Input Capacitance (Ciss) (Max) @ Vds :

1485pF @ 4V

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Number of Channels :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

5V

FET Type :

P-Channel

Number of Terminations :

3

Vgs(th) (Max) @ Id :

800mV @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Threshold Voltage :

-350mV

REACH SVHC :

No SVHC

Turn On Delay Time :

20 ns

Fall Time (Typ) :

20 ns

ECCN Code :

EAR99

Number of Pins :

3

Max Junction Temperature (Tj) :

150°C

Published :

2014

Number of Elements :

1

Drain to Source Breakdown Voltage :

-8V

Radiation Hardening :

No

Power Dissipation :

1.25W

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Rise Time :

22ns

Height :

1.12mm

JESD-609 Code :

e3

Power Dissipation-Max :

2.5W Tc

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Vgs (Max) :

±5V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

46 ns

Pin Count :

3

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

8V

Terminal Position :

Dual

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.3A, 4.5V