SI2327DS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Power Dissipation :

750mW

Mount :

Surface Mount

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

-490mA

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain to Source Breakdown Voltage :

-200V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

380mA Ta

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Pbfree Code :

yes

Power Dissipation-Max :

750mW Ta

Element Configuration :

Single

Threshold Voltage :

-4.5V

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

Number of Terminations :

3

FET Type :

P-Channel

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

-4.5 V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Rds On (Max) @ Id, Vgs :

2.35 Ω @ 500mA, 10V

Published :

2012

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

2.45Ohm

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

REACH SVHC :

Unknown