SI2327DS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JESD-609 Code :

e3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

380mA Ta

Terminal Position :

Dual

Power Dissipation-Max :

750mW Ta

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

-4.5V

Radiation Hardening :

No

Number of Terminations :

3

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Mount :

Surface Mount

Terminal Form :

Gull wing

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2.35 Ω @ 500mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-200V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

200V

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Power Dissipation :

750mW

Resistance :

2.35Ohm

Lead Free :

Lead Free

Published :

2015

Pin Count :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current (ID) :

-490mA

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30