SI2325DS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

530mA Ta

Turn On Delay Time :

7 ns

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Height :

1.12mm

Factory Lead Time :

14 Weeks

Element Configuration :

Single

Transistor Application :

SWITCHING

Threshold Voltage :

-4.5V

Mount :

Surface Mount

FET Type :

P-Channel

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

-150V

Power Dissipation :

750mW

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Resistance :

1.2Ohm

Weight :

1.437803g

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Published :

2003

Power Dissipation-Max :

750mW Ta

Number of Pins :

3

Max Junction Temperature (Tj) :

150°C

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 500mA, 10V

Width :

1.4mm

Drain to Source Voltage (Vdss) :

150V

Continuous Drain Current (ID) :

-690mA

JESD-609 Code :

e3

Contact Plating :

Tin

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Turn-Off Delay Time :

16 ns

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Radiation Hardening :

No

Length :

3.04mm

Number of Terminations :

3