SI2323DS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Fall Time (Typ) :

43 ns

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1V @ 250μA

Lead Free :

Lead Free

Published :

2008

JESD-609 Code :

e3

Continuous Drain Current (ID) :

-4.7A

Weight :

1.437803g

Drain to Source Voltage (Vdss) :

20V

REACH SVHC :

Unknown

Height :

1.02mm

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

Turn-Off Delay Time :

71 ns

Radiation Hardening :

No

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

8V

Rds On (Max) @ Id, Vgs :

39m Ω @ 4.7A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Turn On Delay Time :

25 ns

Terminal Form :

Gull wing

Element Configuration :

Single

Transistor Application :

SWITCHING

Threshold Voltage :

-1V

Width :

1.4mm

Resistance :

39mOhm

Mounting Type :

Surface Mount

Vgs (Max) :

±8V

Power Dissipation :

1.25W

Number of Elements :

1

Number of Terminations :

3

Power Dissipation-Max :

750mW Ta

Drain to Source Breakdown Voltage :

-20V

Length :

3.04mm

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Transistor Element Material :

SILICON

Series :

TrenchFET®

ECCN Code :

EAR99

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

-1 V

Factory Lead Time :

15 Weeks

Rise Time :

43ns

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Pbfree Code :

yes