SI2323DS-T1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

SOT-23-3 (TO-236)

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Gate to Source Voltage (Vgs) :

8V

Vgs (Max) :

±8V

Drain to Source Resistance :

39mOhm

Min Operating Temperature :

-55°C

Rds On Max :

39 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 10V

Input Capacitance :

1.02nF

Turn-Off Delay Time :

71 ns

Power Dissipation-Max :

750mW Ta

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Number of Pins :

3

FET Type :

P-Channel

Turn On Delay Time :

25 ns

Height :

1.02mm

Published :

2013

Operating Temperature :

-55°C~150°C TJ

Rise Time :

43ns

Continuous Drain Current (ID) :

3.7A

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-20V

Power Dissipation :

1.25W

Packaging :

Tape and Reel (TR)

Width :

1.4mm

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Rds On (Max) @ Id, Vgs :

39mOhm @ 4.7A, 4.5V

Max Operating Temperature :

150°C

Fall Time (Typ) :

43 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Length :

3.04mm

Mounting Type :

Surface Mount

Number of Channels :

1

Weight :

1.437803g

Series :

TrenchFET®

Drain to Source Voltage (Vdss) :

20V