SI2323DDS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Number of Pins :

3

Rise Time :

22ns

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

39m Ω @ 4.1A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

Terminal Position :

Dual

Continuous Drain Current (ID) :

-4.1A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Packaging :

Cut Tape (CT)

Height :

1.12mm

Contact Plating :

Tin

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 8V

Turn-Off Delay Time :

58 ns

Drain to Source Breakdown Voltage :

-20V

Published :

2013

Element Configuration :

Single

Power Dissipation :

960mW

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1160pF @ 10V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Turn On Delay Time :

8 ns

Terminal Form :

Gull wing

Factory Lead Time :

14 Weeks

Threshold Voltage :

-1V

Number of Channels :

1

Number of Terminations :

3

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Power Dissipation-Max :

960mW Ta 1.7W Tc

Max Junction Temperature (Tj) :

150°C

Fall Time (Typ) :

11 ns

Vgs (Max) :

±8V

Drain to Source Voltage (Vdss) :

20V

Gate to Source Voltage (Vgs) :

8V