SI2319DS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

-3A

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 20V

Width :

1.4mm

Fall Time (Typ) :

15 ns

Drain to Source Breakdown Voltage :

-40V

Length :

3.04mm

Rds On (Max) @ Id, Vgs :

82m Ω @ 3A, 10V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Power Dissipation-Max :

750mW Ta

FET Type :

P-Channel

Threshold Voltage :

-3V

Number of Channels :

1

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Nominal Vgs :

-3 V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage :

40V

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Resistance :

82mOhm

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

REACH SVHC :

Unknown

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Element Configuration :

Single

Mount :

Surface Mount

Mounting Type :

Surface Mount

Published :

2011

Number of Pins :

3

Weight :

1.437803g

Power Dissipation :

750mW

Contact Plating :

Tin

Number of Terminations :

3

Current :

3A

Pbfree Code :

yes

Number of Elements :

1

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e3

Terminal Position :

Dual

Turn-Off Delay Time :

25 ns

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Junction Temperature (Tj) :

150°C

Rise Time :

15ns

Height :

1.12mm

Turn On Delay Time :

7 ns