SI2318DS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Weight :

1.437803g

Series :

TrenchFET®

Number of Channels :

1

JESD-609 Code :

e3

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Height :

1.12mm

Lead Free :

Lead Free

Pbfree Code :

yes

Terminal Form :

Gull wing

Max Junction Temperature (Tj) :

150°C

Power Dissipation-Max :

750mW Ta

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

3A

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

1

Terminal Position :

Dual

Mounting Type :

Surface Mount

Resistance :

45mOhm

Pin Count :

3

Element Configuration :

Single

Fall Time (Typ) :

12 ns

Power Dissipation :

750mW

Threshold Voltage :

3V

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 20V

Length :

3.04mm

Factory Lead Time :

14 Weeks

REACH SVHC :

Unknown

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

5 ns

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Nominal Vgs :

3 V

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current (ID) :

3.9A

Rise Time :

12ns

Width :

1.4mm

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

40V

FET Type :

N-Channel

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

45m Ω @ 3.9A, 10V

Published :

2009

Mount :

Surface Mount

Transistor Element Material :

SILICON

Turn-Off Delay Time :

20 ns