SI2316DS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

50m Ω @ 3.4A, 10V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2.9A Ta

Pin Count :

3

Number of Channels :

1

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

2.9A

Input Capacitance (Ciss) (Max) @ Vds :

215pF @ 15V

Weight :

1.437803g

Element Configuration :

Single

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.05Ohm

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

3.4A

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

14 ns

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

800mV @ 250µA (Min)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mount :

Surface Mount

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Number of Pins :

3

Turn On Delay Time :

9 ns

Factory Lead Time :

14 Weeks

FET Type :

N-Channel

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Power Dissipation-Max :

700mW Ta