SI2316DS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

2.9A Ta

Continuous Drain Current (ID) :

3.4A

FET Type :

N-Channel

Mounting Type :

Surface Mount

Weight :

1.437803g

Number of Terminations :

3

Transistor Element Material :

SILICON

Published :

2011

Turn-Off Delay Time :

14 ns

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

800mV @ 250µA (Min)

Height :

1.02mm

Terminal Finish :

Matte Tin (Sn)

Nominal Vgs :

800 mV

Power Dissipation-Max :

700mW Ta

Transistor Application :

SWITCHING

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Current :

2A

RoHS Status :

ROHS3 Compliant

Voltage :

30V

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

JESD-609 Code :

e3

REACH SVHC :

Unknown

Length :

3.04mm

Resistance :

50mOhm

Number of Channels :

1

Lead Free :

Lead Free

Turn On Delay Time :

9 ns

Rise Time :

9ns

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Power Dissipation :

700mW

Terminal Form :

Gull wing

Element Configuration :

Single

Factory Lead Time :

14 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

50m Ω @ 3.4A, 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Fall Time (Typ) :

9 ns

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

215pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

1.4mm

Number of Pins :

3