SI2316BDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

50m Ω @ 3.9A, 10V

Width :

1.4mm

Turn-Off Delay Time :

11 ns

Resistance :

50mOhm

Published :

2008

Power Dissipation-Max :

1.25W Ta 1.66W Tc

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Power Dissipation :

1.25W

Drain Current-Max (Abs) (ID) :

4.5A

Number of Elements :

1

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Length :

3.04mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Weight :

1.437803g

Pbfree Code :

yes

Mount :

Surface Mount

Fall Time (Typ) :

65 ns

Number of Terminations :

3

Continuous Drain Current (ID) :

3.9A

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Radiation Hardening :

No

Height :

1.02mm

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

9.6nC @ 10V

Factory Lead Time :

14 Weeks

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 15V

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

20 ns

Terminal Form :

Gull wing

Element Configuration :

Single

Series :

TrenchFET®

FET Type :

N-Channel

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Rise Time :

65ns

Transistor Application :

SWITCHING