SI2315BDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Height :

1.12mm

Weight :

1.437803g

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-236-3, SC-59, SOT-23-3

Resistance :

50mOhm

Terminal Position :

Dual

Terminal Form :

Gull wing

Turn On Delay Time :

15 ns

Nominal Vgs :

-900 mV

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

715pF @ 6V

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Continuous Drain Current (ID) :

-3A

Dual Supply Voltage :

-12V

Rds On (Max) @ Id, Vgs :

50m Ω @ 3.85A, 4.5V

Current :

3A

Published :

2005

Threshold Voltage :

-900mV

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Radiation Hardening :

No

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Number of Pins :

3

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

900mV @ 250μA

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

FET Type :

P-Channel

Vgs (Max) :

±8V

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

750mW Ta

Rise Time :

35ns

Length :

3.04mm

Drain to Source Breakdown Voltage :

-12V

Pin Count :

3

Voltage :

12V

Power Dissipation :

750mW

Width :

1.4mm

Fall Time (Typ) :

35 ns

Termination :

SMD/SMT

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Factory Lead Time :

14 Weeks

Turn-Off Delay Time :

50 ns

Number of Elements :

1

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON