SI2314EDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.4mm

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

3.77A Ta

Continuous Drain Current (ID) :

4.9A

Terminal Position :

Dual

Terminal Form :

Gull wing

Mount :

Surface Mount

Vgs (Max) :

±12V

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Turn-Off Delay Time :

13.5 μs

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Threshold Voltage :

950mV

Power Dissipation-Max :

750mW Ta

Series :

TrenchFET®

Number of Pins :

3

Fall Time (Typ) :

1.4 μs

Pin Count :

3

Height :

1.02mm

Weight :

1.437803g

Nominal Vgs :

950 mV

Power Dissipation :

750mW

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Vgs(th) (Max) @ Id :

950mV @ 250μA

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

33m Ω @ 5A, 4.5V

Radiation Hardening :

No

Contact Plating :

Tin

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Length :

3.04mm

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

Turn On Delay Time :

530 ns

Resistance :

33mOhm

Published :

2016

Rise Time :

1.4μs

Drain to Source Breakdown Voltage :

20V

FET Type :

N-Channel