SI2312BDS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Terminal Finish :

Matte Tin (Sn)

Number of Channels :

1

Power Dissipation-Max :

750mW Ta

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±8V

Terminal Form :

Gull wing

Fall Time (Typ) :

30 ns

Pbfree Code :

yes

Factory Lead Time :

14 Weeks

Resistance :

31mOhm

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Termination :

SMD/SMT

Height :

1.02mm

Rds On (Max) @ Id, Vgs :

31m Ω @ 5A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Mount :

Surface Mount

Width :

1.4mm

Number of Terminations :

3

Drain to Source Breakdown Voltage :

20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gate to Source Voltage (Vgs) :

8V

FET Type :

N-Channel

ECCN Code :

EAR99

Weight :

1.437803g

Vgs(th) (Max) @ Id :

850mV @ 250μA

Turn-Off Delay Time :

35 ns

Dual Supply Voltage :

20V

Turn On Delay Time :

9 ns

Length :

3.04mm

Power Dissipation :

750mW

Number of Elements :

1

Rise Time :

30ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Current - Continuous Drain (Id) @ 25°C :

3.9A Ta

Continuous Drain Current (ID) :

5A

Lead Free :

Lead Free

Element Configuration :

Single

Radiation Hardening :

No

Published :

2013

Nominal Vgs :

8 V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Terminal Position :

Dual

Mounting Type :

Surface Mount

REACH SVHC :

Unknown

Threshold Voltage :

8V

Peak Reflow Temperature (Cel) :

260