SI2309DS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

-1.25A

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Max Operating Temperature :

150°C

Rise Time :

11.5ns

Weight :

1.437803g

FET Type :

P-Channel

Series :

TrenchFET®

Supplier Device Package :

SOT-23-3 (TO-236)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.25W

Number of Channels :

1

Turn On Delay Time :

10.5 ns

Fall Time (Typ) :

11.5 ns

Voltage :

60V

Rds On Max :

340 mΩ

Turn-Off Delay Time :

15.5 ns

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

340mOhm @ 1.25A, 10V

Vgs (Max) :

±20V

Length :

3.04mm

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

1.25W Ta

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Width :

1.4mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Drain to Source Resistance :

340mOhm

Min Operating Temperature :

-55°C

Height :

1.02mm

Current :

12A

Resistance :

340mOhm

Radiation Hardening :

No

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Published :

2008