SI2309CDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Channels :

1

Drain to Source Breakdown Voltage :

-60V

Threshold Voltage :

-1V

Drain to Source Voltage (Vdss) :

60V

Height :

1.12mm

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

5 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

4.1nC @ 4.5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25°C :

1.6A Tc

Weight :

1.437803g

Resistance :

345mOhm

Base Part Number :

SI2309

Max Junction Temperature (Tj) :

150°C

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Rise Time :

35ns

Width :

1.4mm

Terminal Position :

Dual

Published :

2013

Radiation Hardening :

No

Number of Pins :

3

ECCN Code :

EAR99

Turn-Off Delay Time :

15 ns

Transistor Application :

SWITCHING

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Vgs (Max) :

±20V

Power Dissipation :

1W

Continuous Drain Current (ID) :

-1.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Fall Time (Typ) :

35 ns

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 30V

Rds On (Max) @ Id, Vgs :

345m Ω @ 1.25A, 10V

Length :

3.04mm

Transistor Element Material :

SILICON

FET Type :

P-Channel

Factory Lead Time :

14 Weeks

Power Dissipation-Max :

1W Ta 1.7W Tc

Number of Terminations :

3