SI2308DS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

160mOhm

Power Dissipation-Max :

1.25W Ta

Element Configuration :

Single

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Rds On (Max) @ Id, Vgs :

160mOhm @ 2A, 10V

Threshold Voltage :

3V

Number of Pins :

3

Weight :

1.437803g

Vgs (Max) :

±20V

Rds On Max :

160 mΩ

Series :

TrenchFET®

Length :

3.04mm

Continuous Drain Current (ID) :

2A

Published :

2016

Supplier Device Package :

SOT-23-3 (TO-236)

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Input Capacitance :

240pF

FET Type :

N-Channel

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

60V

Number of Elements :

1

Width :

1.4mm

Rise Time :

10ns

Drain to Source Resistance :

160mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn On Delay Time :

7 ns

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

60V

Height :

1.02mm

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

1.25W

REACH SVHC :

No SVHC

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

17 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Operating Temperature :

150°C

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free