SI2308CDS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.6A Tc

Rds On (Max) @ Id, Vgs :

144m Ω @ 1.9A, 10V

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

10

Package / Case :

TO-236-3, SC-59, SOT-23-3

Factory Lead Time :

14 Weeks

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Transistor Element Material :

SILICON

Number of Terminations :

3

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

105pF @ 30V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

60V

Drain Current-Max (Abs) (ID) :

2.6A

Series :

TrenchFET® Gen IV

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G3

FET Type :

N-Channel

Power Dissipation-Max :

1.6W Tc

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.144Ohm

Terminal Position :

Dual