SI2308BDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

ECCN Code :

EAR99

FET Type :

N-Channel

Fall Time (Typ) :

16 ns

Turn-Off Delay Time :

10 ns

Power Dissipation-Max :

1.09W Ta 1.66W Tc

Rds On (Max) @ Id, Vgs :

156m Ω @ 1.9A, 10V

JESD-609 Code :

e3

Weight :

1.437803g

Height :

1.12mm

Pin Count :

3

Number of Terminations :

3

Power Dissipation :

1.09W

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 30V

Factory Lead Time :

14 Weeks

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Rise Time :

16ns

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

1.9A

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-236-3, SC-59, SOT-23-3

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 10V

Element Configuration :

Single

Terminal Position :

Dual

Mounting Type :

Surface Mount

Resistance :

156mOhm

Length :

3.04mm

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

2.3A Tc

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Vgs (Max) :

±20V

Threshold Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Series :

TrenchFET®

Width :

1.4mm

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

4 ns

Published :

2003

Number of Elements :

1

Number of Channels :

1

REACH SVHC :

Unknown

Drain to Source Breakdown Voltage :

60V

Pbfree Code :

yes