SI2306BDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Width :

1.4mm

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

47m Ω @ 3.5A, 10V

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Element Configuration :

Single

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.02mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

3.16A Ta

Factory Lead Time :

14 Weeks

REACH SVHC :

No SVHC

FET Type :

N-Channel

Pin Count :

3

Number of Channels :

1

Pbfree Code :

yes

Rise Time :

12ns

ECCN Code :

EAR99

Terminal Position :

Dual

Terminal Form :

Gull wing

Resistance :

47mOhm

Power Dissipation-Max :

750mW Ta

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Fall Time (Typ) :

12 ns

Radiation Hardening :

No

Power Dissipation :

1.25W

Turn On Delay Time :

7 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current (ID) :

3.16A

Threshold Voltage :

3V

Published :

2008

Series :

TrenchFET®

Length :

3.04mm

Weight :

1.437803g

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Vgs (Max) :

±20V

Turn-Off Delay Time :

14 ns

Number of Elements :

1

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

305pF @ 15V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 5V