SI2305CDS-T1-GE3
- Mfr.Part #
- SI2305CDS-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 8V 5.8A SOT23-3
- Stock
- 318,634
- In Stock :
- 318,634
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 960mW Ta 1.7W Tc
- Number of Pins :
- 3
- Published :
- 2013
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 960pF @ 4V
- Current :
- 58A
- Factory Lead Time :
- 14 Weeks
- Power Dissipation :
- 960mW
- Fall Time (Typ) :
- 20 ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Junction Temperature (Tj) :
- 150°C
- Drain to Source Breakdown Voltage :
- -8V
- Current - Continuous Drain (Id) @ 25°C :
- 5.8A Tc
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Resistance :
- 35mOhm
- Terminal Finish :
- Matte Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- FET Type :
- P-Channel
- Length :
- 3.04mm
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 8V
- Threshold Voltage :
- -400mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 20 ns
- Height :
- 1.12mm
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Pin Count :
- 3
- Radiation Hardening :
- No
- Width :
- 1.4mm
- Lead Free :
- Lead Free
- Rise Time :
- 20ns
- Element Configuration :
- Single
- Number of Channels :
- 1
- Vgs (Max) :
- ±8V
- Voltage :
- 8V
- Turn-Off Delay Time :
- 40 ns
- JESD-609 Code :
- e3
- Weight :
- 1.437803g
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Series :
- TrenchFET®
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 8V
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Continuous Drain Current (ID) :
- -4.4A
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 4.4A, 4.5V
- Terminal Position :
- Dual
- Datasheets
- SI2305CDS-T1-GE3

P-Channel Tape & Reel (TR) 35m Ω @ 4.4A, 4.5V ±8V 960pF @ 4V 30nC @ 8V TO-236-3, SC-59, SOT-23-3
SI2305CDS-T1-GE3 Overview
A device's maximal input capacitance is 960pF @ 4V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -4.4A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -8V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -400mV threshold voltage.This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
SI2305CDS-T1-GE3 Features
a continuous drain current (ID) of -4.4A
a drain-to-source breakdown voltage of -8V voltage
the turn-off delay time is 40 ns
a threshold voltage of -400mV
SI2305CDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2305CDS-T1-GE3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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