SI2305ADS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Turn-Off Delay Time :

22 ns

Operating Temperature :

-50°C~150°C TJ

Series :

TrenchFET®

Terminal Finish :

MATTE TIN

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Vgs (Max) :

±8V

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain Current-Max (Abs) (ID) :

5.4A

Number of Elements :

1

Power Dissipation-Max :

960mW Ta 1.7W Tc

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.1A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

8V

Pbfree Code :

yes

Continuous Drain Current (ID) :

-4.1A

Pin Count :

3

Mount :

Surface Mount

Published :

2014

REACH SVHC :

Unknown

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 4V

Number of Terminations :

3

Nominal Vgs :

-800 mV

Fall Time (Typ) :

11 ns

RoHS Status :

ROHS3 Compliant

Rise Time :

11ns

Gate to Source Voltage (Vgs) :

8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

-800mV

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

800mV @ 250μA

Resistance :

40mOhm

Power Dissipation :

960mW

ECCN Code :

EAR99

Mounting Type :

Surface Mount