SI2305ADS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

Gate to Source Voltage (Vgs) :

8V

Continuous Drain Current (ID) :

4.1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

MATTE TIN

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Vgs(th) (Max) @ Id :

800mV @ 250μA

ECCN Code :

EAR99

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-8V

JESD-609 Code :

e3

Rise Time :

11ns

Drain Current-Max (Abs) (ID) :

5.4A

Terminal Position :

Dual

Mounting Type :

Surface Mount

Fall Time (Typ) :

11 ns

Vgs (Max) :

±8V

Radiation Hardening :

No

Operating Temperature :

-50°C~150°C TJ

Pin Count :

3

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Resistance :

40mOhm

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.1A, 4.5V

Published :

2015

Element Configuration :

Single

Number of Pins :

3

Series :

TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 4V

Turn-Off Delay Time :

22 ns

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

960mW Ta 1.7W Tc

Pbfree Code :

yes

Mount :

Surface Mount

Transistor Element Material :

SILICON