SI2304BDS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

70m Ω @ 2.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

30V

Rise Time :

12.5ns

Terminal Form :

Gull wing

Radiation Hardening :

No

Turn-Off Delay Time :

19 ns

Height :

1.12mm

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Length :

3.04mm

Drain Current-Max (Abs) (ID) :

2.6A

Factory Lead Time :

14 Weeks

Weight :

1.437803g

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Number of Channels :

1

Element Configuration :

Single

Mounting Type :

Surface Mount

Mount :

Surface Mount

Threshold Voltage :

2.25V

Fall Time (Typ) :

12.5 ns

REACH SVHC :

Unknown

Resistance :

70mOhm

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Published :

2015

Power Dissipation :

750mW

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

30

Pbfree Code :

yes

Number of Terminations :

3

Series :

TrenchFET®

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

7.5 ns

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 5V

Power Dissipation-Max :

750mW Ta

Vgs(th) (Max) @ Id :

3V @ 250µA

Peak Reflow Temperature (Cel) :

260

Max Junction Temperature (Tj) :

150°C

Width :

1.4mm

Continuous Drain Current (ID) :

3.2A

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)