SI2303CDS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Height :

1.12mm

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

Drain to Source Breakdown Voltage :

-30V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

-2.7A

Vgs(th) (Max) @ Id :

3V @ 250µA

Fall Time (Typ) :

37 ns

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Weight :

1.437803g

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Width :

1.4mm

Turn On Delay Time :

4 ns

Terminal Form :

Gull wing

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

3

Rise Time :

37ns

Vgs (Max) :

±20V

Power Dissipation :

1W

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

Turn-Off Delay Time :

11 ns

Length :

3.04mm

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Series :

TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

155pF @ 15V

Transistor Application :

SWITCHING

Power Dissipation-Max :

1W Ta 2.3W Tc

Resistance :

190mOhm

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

190m Ω @ 1.9A, 10V

Number of Terminations :

3

Pbfree Code :

yes

Threshold Voltage :

-3V

Peak Reflow Temperature (Cel) :

260

Max Junction Temperature (Tj) :

150°C

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Published :

2009

Nominal Vgs :

-3 V

Lead Free :

Lead Free