SI2303CDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

36 ns

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-30V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

Continuous Drain Current (ID) :

1.9A

Turn-Off Delay Time :

12 ns

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Number of Terminations :

3

JESD-609 Code :

e3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Width :

1.4mm

Vgs (Max) :

±20V

Power Dissipation-Max :

2.3W Tc

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Height :

1.02mm

Drain Current-Max (Abs) (ID) :

2.7A

Series :

TrenchFET®

Radiation Hardening :

No

Length :

3.04mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

155pF @ 15V

Weight :

1.437803g

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Pin Count :

3

Transistor Element Material :

SILICON

Resistance :

190mOhm

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

3V @ 250µA

Fall Time (Typ) :

37 ns

Published :

2009

Rise Time :

37ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

2.3W

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

190m Ω @ 1.9A, 10V

Mounting Type :

Surface Mount

Element Configuration :

Single

Terminal Form :

Gull wing