SI2303BDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

1.4mm

Voltage :

30V

Current :

164A

Max Dual Supply Voltage :

22V

Turn On Delay Time :

55 ns

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Transistor Element Material :

SILICON

Fall Time (Typ) :

40 ns

Power Dissipation-Max :

700mW Ta

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.7A, 10V

Length :

3.04mm

Rise Time :

40ns

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

10 ns

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

-3 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Terminal Position :

Dual

Published :

2008

JESD-609 Code :

e3

Pbfree Code :

yes

Resistance :

200mOhm

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

1.3A

Threshold Voltage :

-3V

Operating Mode :

ENHANCEMENT MODE

Max Supply Voltage :

36V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Pin Count :

3

Height :

1.02mm

Min Supply Voltage :

13V

Current - Continuous Drain (Id) @ 25°C :

1.49A Ta

Min Dual Supply Voltage :

7V

Number of Elements :

1

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Element Configuration :

Single

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 15V

Power Dissipation :

900mW

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3