SI2303BDS-T1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.49A Ta

Max Operating Temperature :

150°C

Mount :

Surface Mount

Published :

2016

Length :

3.04mm

Width :

1.4mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

40ns

Height :

1.02mm

Drain to Source Breakdown Voltage :

-30V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Power Dissipation-Max :

700mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 15V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation :

900mW

Rds On Max :

200 mΩ

Weight :

1.437803g

FET Type :

P-Channel

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Element Configuration :

Single

Min Operating Temperature :

-55°C

Turn On Delay Time :

55 ns

Input Capacitance :

180pF

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Turn-Off Delay Time :

10 ns

Continuous Drain Current (ID) :

1.49A

Supplier Device Package :

SOT-23-3 (TO-236)

Number of Channels :

1

Mounting Type :

Surface Mount

Fall Time (Typ) :

40 ns

RoHS Status :

ROHS3 Compliant

Drain to Source Resistance :

200mOhm

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

200mOhm @ 1.7A, 10V

Drain to Source Voltage (Vdss) :

30V