SI2302DDS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Power Dissipation-Max :

710mW Ta

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

8V

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

2.9A Tj

Number of Elements :

1

Terminal Position :

Dual

Series :

TrenchFET®

Package / Case :

TO-236-3, SC-59, SOT-23-3

Fall Time (Typ) :

7 ns

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±8V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

8 ns

Published :

2012

Weight :

1.437803g

Vgs(th) (Max) @ Id :

850mV @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

710mW

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.057Ohm

Pbfree Code :

yes

Rise Time :

7ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Application :

SWITCHING

FET Type :

N-Channel

ECCN Code :

EAR99

Turn-Off Delay Time :

30 ns

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 4.5V

Number of Pins :

3

Continuous Drain Current (ID) :

2.6A

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

57m Ω @ 3.6A, 4.5V

Mount :

Surface Mount

Terminal Form :

Gull wing