SI1499DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

1.6A Tc

Factory Lead Time :

14 Weeks

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

JESD-609 Code :

e3

Radiation Hardening :

No

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Width :

1.25mm

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

5V

Rds On (Max) @ Id, Vgs :

78m Ω @ 2A, 4.5V

Pbfree Code :

yes

Weight :

7.512624mg

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

8V

Transistor Application :

SWITCHING

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

800mV @ 250μA

Number of Elements :

1

REACH SVHC :

Unknown

Fall Time (Typ) :

60 ns

Turn-Off Delay Time :

46 ns

Series :

TrenchFET®

Length :

2mm

Power Dissipation-Max :

2.5W Ta 2.78W Tc

Number of Pins :

6

Turn On Delay Time :

8 ns

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Flat

Continuous Drain Current (ID) :

1.6A

Power Dissipation :

2.5W

Resistance :

78mOhm

Threshold Voltage :

-800mV

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Nominal Vgs :

-800 mV

ECCN Code :

EAR99

Mount :

Surface Mount

Number of Terminations :

6

Number of Channels :

1

Published :

2013

Vgs (Max) :

±5V

DS Breakdown Voltage-Min :

8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-TSSOP, SC-88, SOT-363

Height :

1mm

Rise Time :

40ns

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 4V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)