SI1401EDH-T1-GE3
- Mfr.Part #
- SI1401EDH-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 4A SC70-6
- Stock
- 32,187
- In Stock :
- 32,187
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 34mOhm
- Number of Pins :
- 6
- Weight :
- 7.512624mg
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 8V
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 5.5A, 4.5V
- Terminal Finish :
- PURE MATTE TIN
- Published :
- 2017
- Number of Terminations :
- 6
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 10V
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Number of Channels :
- 1
- Threshold Voltage :
- 400mV
- Power Dissipation-Max :
- 1.6W Ta 2.8W Tc
- Transistor Application :
- SWITCHING
- FET Type :
- P-Channel
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Drain Current-Max (Abs) (ID) :
- 4A
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Vgs (Max) :
- ±10V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 14 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- Unknown
- Power Dissipation :
- 1.6W
- Drain to Source Voltage (Vdss) :
- 12V
- Continuous Drain Current (ID) :
- 4A
- Series :
- TrenchFET®
- Terminal Form :
- Gull wing
- Pin Count :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Datasheets
- SI1401EDH-T1-GE3
P-Channel Tape & Reel (TR) 34m Ω @ 5.5A, 4.5V ±10V 36nC @ 8V 12V 6-TSSOP, SC-88, SOT-363
SI1401EDH-T1-GE3 Overview
This device's continuous drain current (ID) is 4A, which represents the maximum continuous current it can conduct.In this device, the drain current is 4A, which is the maximum continuous current the device can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 400mV threshold voltage.This transistor requires a 12V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.5V 4.5V).
SI1401EDH-T1-GE3 Features
a continuous drain current (ID) of 4A
a threshold voltage of 400mV
a 12V drain to source voltage (Vdss)
SI1401EDH-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI1401EDH-T1-GE3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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