SI1403CDL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Number of Pins :

6

Pin Count :

6

Lead Free :

Lead Free

Width :

1.25mm

Published :

2010

Power Dissipation :

600mW

Current - Continuous Drain (Id) @ 25°C :

2.1A Tc

Threshold Voltage :

600mV

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

30 ns

RoHS Status :

ROHS3 Compliant

Package / Case :

6-TSSOP, SC-88, SOT-363

ECCN Code :

EAR99

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

20V

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

281pF @ 10V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

2.1A

Weight :

7.512624mg

Vgs (Max) :

±12V

Terminal Finish :

Matte Tin (Sn)

Length :

2.05mm

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

140m Ω @ 1.6A, 4.5V

Transistor Element Material :

SILICON

Turn On Delay Time :

18 ns

Rise Time :

26ns

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Series :

TrenchFET®

REACH SVHC :

No SVHC

Number of Terminations :

6

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Elements :

1

Height :

900μm

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

12V

Number of Channels :

1

Fall Time (Typ) :

18 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

600mW Ta 900mW Tc