SI1405DL-T1-E3

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Mfr.Part #
SI1405DL-T1-E3
Manufacturer
Vishay
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
MOSFET P-CH 8V 1.6A SC70-6
Stock
19,461
In Stock :
19,461

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
2.3876mm
Power Dissipation-Max :
568mW Ta
Element Configuration :
Single
Mount :
Surface Mount
Turn-Off Delay Time :
33 ns
Power Dissipation :
568mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
8V
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 4.5V
Rds On (Max) @ Id, Vgs :
125mOhm @ 1.8A, 4.5V
Number of Pins :
6
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Current - Continuous Drain (Id) @ 25°C :
1.6A Ta
Drain to Source Resistance :
210mOhm
Min Operating Temperature :
-55°C
Supplier Device Package :
SC-70-6 (SOT-363)
Radiation Hardening :
No
FET Type :
P-Channel
Lead Free :
Lead Free
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
36 ns
Max Operating Temperature :
150°C
Packaging :
Tape and Reel (TR)
Width :
1.3462mm
Vgs(th) (Max) @ Id :
450mV @ 250μA (Min)
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±8V
Package / Case :
6-TSSOP, SC-88, SOT-363
Height :
990.6μm
Continuous Drain Current (ID) :
1.6A
Drain to Source Breakdown Voltage :
8V
Rds On Max :
54 mΩ
Mounting Type :
Surface Mount
Series :
TrenchFET®
Turn On Delay Time :
8 ns
Rise Time :
36ns
Resistance :
125mOhm
Gate to Source Voltage (Vgs) :
8V
Datasheets
SI1405DL-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI1405DL-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Operating Temperature:-55°C~150°C TJ, Package / Case:6-TSSOP, SC-88, SOT-363, Mounting Type:Surface Mount, SI1405DL-T1-E3 pinout, SI1405DL-T1-E3 datasheet PDF, SI1405DL-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI1405DL-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI1405DL-T1-E3


P-Channel Tape & Reel (TR) 125mOhm @ 1.8A, 4.5V ±8V 7nC @ 4.5V 8V 6-TSSOP, SC-88, SOT-363

SI1405DL-T1-E3 Overview


This device's continuous drain current (ID) is 1.6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 8V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 33 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 210mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.This transistor requires a 8V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).

SI1405DL-T1-E3 Features


a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of 8V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 210mOhm
a 8V drain to source voltage (Vdss)


SI1405DL-T1-E3 Applications


There are a lot of Vishay Siliconix
SI1405DL-T1-E3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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