SI1400DL-T1-E3
- Mfr.Part #
- SI1400DL-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 1.6A SC70-6
- Stock
- 61,769
- In Stock :
- 61,769
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- Unknown
- Gate to Source Voltage (Vgs) :
- 12V
- Resistance :
- 150mOhm
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2010
- Power Dissipation-Max :
- 568mW Ta
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 625mW
- Rise Time :
- 30ns
- Operating Temperature :
- -55°C~150°C TJ
- Max Operating Temperature :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 600mV
- Mount :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC @ 4.5V
- Continuous Drain Current (ID) :
- 1.7A
- Width :
- 1.25mm
- Series :
- TrenchFET®
- Supplier Device Package :
- SC-70-6 (SOT-363)
- Fall Time (Typ) :
- 8 ns
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 150mOhm @ 1.7A, 4.5V
- Vgs(th) (Max) @ Id :
- 600mV @ 250μA (Min)
- Number of Elements :
- 1
- Drain to Source Resistance :
- 150mOhm
- Turn-Off Delay Time :
- 14 ns
- Vgs (Max) :
- ±12V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Turn On Delay Time :
- 10 ns
- Length :
- 2mm
- Height :
- 1mm
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Factory Lead Time :
- 15 Weeks
- Nominal Vgs :
- 600 mV
- FET Type :
- N-Channel
- Rds On Max :
- 150 mΩ
- Drain to Source Voltage (Vdss) :
- 20V
- Element Configuration :
- Single
- Number of Channels :
- 1
- Number of Pins :
- 6
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 7.512624mg
- Radiation Hardening :
- No
- Datasheets
- SI1400DL-T1-E3
N-Channel Tape & Reel (TR) 150mOhm @ 1.7A, 4.5V ±12V 4nC @ 4.5V 20V 6-TSSOP, SC-88, SOT-363
SI1400DL-T1-E3 Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.7A.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 14 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 150mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.600mV is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (2.5V 4.5V) reduces this device's overall power consumption.
SI1400DL-T1-E3 Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 150mOhm
a threshold voltage of 600mV
a 20V drain to source voltage (Vdss)
SI1400DL-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1400DL-T1-E3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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