SI1405BDH-T1-GE3

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Mfr.Part #
SI1405BDH-T1-GE3
Manufacturer
Vishay
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
MOSFET P-CH 8V 1.6A SC70-6
Stock
25,734
In Stock :
25,734

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
7 ns
Turn On Delay Time :
10 ns
Min Operating Temperature :
-55°C
Continuous Drain Current (ID) :
1.6A
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
16 ns
Rds On (Max) @ Id, Vgs :
112mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Current - Continuous Drain (Id) @ 25°C :
1.6A Tc
Packaging :
Tape and Reel (TR)
Number of Pins :
6
Supplier Device Package :
SC-70-6 (SOT-363)
Gate Charge (Qg) (Max) @ Vgs :
5.5nC @ 4.5V
Rds On Max :
112 mΩ
Drain to Source Voltage (Vdss) :
8V
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
305pF @ 4V
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Input Capacitance :
305pF
Power Dissipation :
1.47W
Rise Time :
26ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
P-Channel
Mount :
Surface Mount
Published :
2012
Vgs (Max) :
±8V
Number of Elements :
1
Max Operating Temperature :
150°C
Package / Case :
6-TSSOP, SC-88, SOT-363
Power Dissipation-Max :
1.47W Ta 2.27W Tc
Vgs(th) (Max) @ Id :
950mV @ 250μA
Series :
TrenchFET®
Gate to Source Voltage (Vgs) :
8V
Datasheets
SI1405BDH-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI1405BDH-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:6, Mounting Type:Surface Mount, Package / Case:6-TSSOP, SC-88, SOT-363, SI1405BDH-T1-GE3 pinout, SI1405BDH-T1-GE3 datasheet PDF, SI1405BDH-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI1405BDH-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI1405BDH-T1-GE3


P-Channel Tape & Reel (TR) 112mOhm @ 2.8A, 4.5V ±8V 305pF @ 4V 5.5nC @ 4.5V 8V 6-TSSOP, SC-88, SOT-363

SI1405BDH-T1-GE3 Overview


A device's maximum input capacitance is 305pF @ 4V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.6A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 16 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.To operate this transistor, you need to apply a 8V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.

SI1405BDH-T1-GE3 Features


a continuous drain current (ID) of 1.6A
the turn-off delay time is 16 ns
a 8V drain to source voltage (Vdss)


SI1405BDH-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI1405BDH-T1-GE3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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