SI1488DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 10V

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Avalanche Energy Rating (Eas) :

5 mJ

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

6.1A

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

1.5W Ta 2.8W Tc

Terminal Position :

Dual

FET Type :

N-Channel

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Fall Time (Typ) :

45 ns

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Mounting Type :

Surface Mount

Turn On Delay Time :

8.5 ns

Mount :

Surface Mount

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

8V

Terminal Finish :

Matte Tin (Sn)

Rise Time :

45ns

REACH SVHC :

Unknown

Lead Free :

Lead Free

Power Dissipation :

1.5W

JESD-609 Code :

e3

Vgs (Max) :

±8V

Turn-Off Delay Time :

35 ns

Terminal Form :

Gull wing

Nominal Vgs :

950 mV

Vgs(th) (Max) @ Id :

950mV @ 250μA

Published :

2005

Drain to Source Breakdown Voltage :

20V

Threshold Voltage :

950mV

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 5V

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

6.1A Tc

Pulsed Drain Current-Max (IDM) :

20A

Rds On (Max) @ Id, Vgs :

49m Ω @ 4.6A, 4.5V

Transistor Application :

SWITCHING

Resistance :

49mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON