SI1473DH-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.5W Ta 2.78W Tc

Package / Case :

6-TSSOP, SC-88, SOT-363

Nominal Vgs :

-1 V

Pulsed Drain Current-Max (IDM) :

8A

Terminal Finish :

PURE MATTE TIN

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

-30V

Terminal Position :

Dual

JESD-609 Code :

e3

Power Dissipation :

1.5W

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Resistance :

100MOhm

RoHS Status :

ROHS3 Compliant

REACH SVHC :

Unknown

Drain Current-Max (Abs) (ID) :

2.7A

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Published :

2014

Series :

TrenchFET®

Pbfree Code :

yes

Mount :

Surface Mount

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Number of Pins :

6

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 4.5V

Number of Channels :

1

Weight :

7.512624mg

Transistor Element Material :

SILICON

Pin Count :

6

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

Input Capacitance (Ciss) (Max) @ Vds :

365pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Continuous Drain Current (ID) :

2.8A

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

100m Ω @ 2A, 10V

Element Configuration :

Single