SI1471DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

1.5W

Rise Time :

20ns

Transistor Application :

SWITCHING

Contact Plating :

Tin

Drain Current-Max (Abs) (ID) :

2.8A

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

20 ns

Rds On (Max) @ Id, Vgs :

100m Ω @ 2A, 10V

Factory Lead Time :

13 Weeks

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

9 ns

JESD-609 Code :

e3

Resistance :

100MOhm

Terminal Form :

Gull wing

Radiation Hardening :

No

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

9.8nC @ 4.5V

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

-30V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

445pF @ 15V

Height :

1mm

Weight :

7.512624mg

FET Type :

P-Channel

Mounting Type :

Surface Mount

Number of Terminations :

6

Width :

1.25mm

Power Dissipation-Max :

1.5W Ta 2.78W Tc

Pbfree Code :

yes

Turn On Delay Time :

4 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Package / Case :

6-TSSOP, SC-88, SOT-363

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Pin Count :

6

Gate to Source Voltage (Vgs) :

12V

Continuous Drain Current (ID) :

-1.6A

REACH SVHC :

Unknown

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Length :

2mm

Threshold Voltage :

-1.6V

Published :

2000

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

Mount :

Surface Mount

Element Configuration :

Single

Vgs (Max) :

±12V

Series :

TrenchFET®