SI1470DH-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

5.1A Tc

Lead Free :

Lead Free

Resistance :

66mOhm

Terminal Finish :

Pure Matte Tin (Sn)

Pbfree Code :

yes

Number of Terminations :

6

Turn On Delay Time :

9 ns

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Avalanche Energy Rating (Eas) :

5 mJ

REACH SVHC :

Unknown

Terminal Position :

Dual

Continuous Drain Current (ID) :

3.8A

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

66m Ω @ 3.8A, 4.5V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Vgs (Max) :

±12V

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Pin Count :

6

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 5V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 15V

Power Dissipation :

1.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

600 mV

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Rise Time :

51ns

Power Dissipation-Max :

1.5W Ta 2.8W Tc

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

Number of Pins :

6

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

12V

Terminal Form :

Gull wing

Turn-Off Delay Time :

18 ns

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Fall Time (Typ) :

7.1 ns

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30