SI1470DH-T1-E3

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Mfr.Part #
SI1470DH-T1-E3
Manufacturer
Vishay
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
MOSFET N-CH 30V 5.1A SC70-6
Stock
3,547
In Stock :
3,547

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
18 ns
Number of Pins :
6
JESD-609 Code :
e3
Drain Current-Max (Abs) (ID) :
3.8A
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Series :
TrenchFET®
REACH SVHC :
Unknown
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
40
Packaging :
Tape and Reel (TR)
Peak Reflow Temperature (Cel) :
260
Vgs(th) (Max) @ Id :
1.6V @ 250μA
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
7.5nC @ 5V
Nominal Vgs :
1.6 V
Number of Terminations :
6
Mount :
Surface Mount
Width :
1.25mm
Input Capacitance (Ciss) (Max) @ Vds :
510pF @ 15V
Element Configuration :
Single
Terminal Form :
Gull wing
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
12V
Package / Case :
6-TSSOP, SC-88, SOT-363
Current - Continuous Drain (Id) @ 25°C :
5.1A Tc
Height :
1mm
Avalanche Energy Rating (Eas) :
5 mJ
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
ECCN Code :
EAR99
Power Dissipation-Max :
1.5W Ta 2.8W Tc
Vgs (Max) :
±12V
Fall Time (Typ) :
51 ns
Threshold Voltage :
1.6V
Turn On Delay Time :
9 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Matte Tin (Sn)
Rise Time :
51ns
Continuous Drain Current (ID) :
4A
Lead Free :
Lead Free
Power Dissipation :
1.5W
Drain to Source Breakdown Voltage :
30V
Terminal Position :
Dual
Pbfree Code :
yes
Length :
2mm
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
66m Ω @ 3.8A, 4.5V
Pin Count :
6
Transistor Application :
SWITCHING
Resistance :
66mOhm
Datasheets
SI1470DH-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI1470DH-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Number of Terminations:6, Package / Case:6-TSSOP, SC-88, SOT-363, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, SI1470DH-T1-E3 pinout, SI1470DH-T1-E3 datasheet PDF, SI1470DH-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI1470DH-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI1470DH-T1-E3


N-Channel Tape & Reel (TR) 66m Ω @ 3.8A, 4.5V ±12V 510pF @ 15V 7.5nC @ 5V 6-TSSOP, SC-88, SOT-363

SI1470DH-T1-E3 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 510pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 3.8A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1.6V threshold voltage. By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.

SI1470DH-T1-E3 Features


the avalanche energy rating (Eas) is 5 mJ
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns
a threshold voltage of 1.6V


SI1470DH-T1-E3 Applications


There are a lot of Vishay Siliconix
SI1470DH-T1-E3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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