SI1469DH-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.08Ohm

Radiation Hardening :

No

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Vgs (Max) :

±12V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 10V

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Published :

2014

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Pin Count :

6

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

80m Ω @ 2A, 10V

FET Type :

P-Channel

Number of Pins :

6

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

DS Breakdown Voltage-Min :

20V

Continuous Drain Current (ID) :

3.2A

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Element Configuration :

Single

Package / Case :

6-TSSOP, SC-88, SOT-363

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

12V

Power Dissipation-Max :

1.5W Ta 2.78W Tc

Pulsed Drain Current-Max (IDM) :

8A

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 4.5V

Drain Current-Max (Abs) (ID) :

2.7A

Time@Peak Reflow Temperature-Max (s) :

30

Series :

TrenchFET®

Power Dissipation :

1.5W

Weight :

7.512624mg

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)