SI1450DH-T1-E3
- Mfr.Part #
- SI1450DH-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET N-CH 8V 4.53A/6.04A SC70
- Stock
- 2,719
- In Stock :
- 2,719
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Nominal Vgs :
- 1 V
- Length :
- 2mm
- Min Operating Temperature :
- -55°C
- Supplier Device Package :
- SC-70-6 (SOT-363)
- Resistance :
- 58mOhm
- Max Operating Temperature :
- 150°C
- Number of Channels :
- 1
- Height :
- 1mm
- Number of Elements :
- 1
- Fall Time (Typ) :
- 73 ns
- Vgs (Max) :
- ±5V
- Drain to Source Voltage (Vdss) :
- 8V
- Dual Supply Voltage :
- 8V
- Gate to Source Voltage (Vgs) :
- 5V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- FET Type :
- N-Channel
- Turn On Delay Time :
- 8 ns
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 73ns
- Current - Continuous Drain (Id) @ 25°C :
- 4.53A Ta 6.04A Tc
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 4A
- Radiation Hardening :
- No
- Power Dissipation :
- 1.56W
- Power Dissipation-Max :
- 1.56W Ta 2.78W Tc
- REACH SVHC :
- No SVHC
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Input Capacitance (Ciss) (Max) @ Vds :
- 535pF @ 4V
- Element Configuration :
- Single
- Drain to Source Resistance :
- 47mOhm
- Input Capacitance :
- 535pF
- Number of Pins :
- 6
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 7.05nC @ 5V
- RoHS Status :
- ROHS3 Compliant
- Rds On Max :
- 47 mΩ
- Weight :
- 7.512624mg
- Width :
- 1.25mm
- Lead Free :
- Lead Free
- Published :
- 2009
- Mount :
- Surface Mount
- Termination :
- SMD/SMT
- Turn-Off Delay Time :
- 18 ns
- Rds On (Max) @ Id, Vgs :
- 47mOhm @ 4A, 4.5V
- Series :
- TrenchFET®
- Threshold Voltage :
- 1V
- Datasheets
- SI1450DH-T1-E3
N-Channel Tape & Reel (TR) 47mOhm @ 4A, 4.5V ±5V 535pF @ 4V 7.05nC @ 5V 8V 6-TSSOP, SC-88, SOT-363
SI1450DH-T1-E3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 535pF @ 4V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4A amps.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 47mOhm.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 5V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1V.To operate this transistor, you will need a 8V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.5V 4.5V).
SI1450DH-T1-E3 Features
a continuous drain current (ID) of 4A
the turn-off delay time is 18 ns
single MOSFETs transistor is 47mOhm
a threshold voltage of 1V
a 8V drain to source voltage (Vdss)
SI1450DH-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1450DH-T1-E3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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