SI1443EDH-T1-GE3
- Mfr.Part #
- SI1443EDH-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 4A SOT-363
- Stock
- 25,373
- In Stock :
- 25,373
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- TrenchFET®
- Turn-Off Delay Time :
- 1.8 μs
- Weight :
- 7.512624mg
- Published :
- 2017
- Pin Count :
- 6
- Radiation Hardening :
- No
- Rise Time :
- 64ns
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 54m Ω @ 4.3A, 10V
- Fall Time (Typ) :
- 420 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Element Configuration :
- Single
- Turn On Delay Time :
- 40 ns
- Power Dissipation :
- 1.6W
- Number of Terminations :
- 6
- Drain Current-Max (Abs) (ID) :
- 4A
- Terminal Form :
- Gull wing
- Nominal Vgs :
- -600 mV
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 10V
- REACH SVHC :
- Unknown
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 4A
- Transistor Element Material :
- SILICON
- Number of Pins :
- 6
- Drain-source On Resistance-Max :
- 0.054Ohm
- Drain to Source Breakdown Voltage :
- -30V
- Factory Lead Time :
- 14 Weeks
- Vgs (Max) :
- ±12V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Gate to Source Voltage (Vgs) :
- 12V
- Number of Channels :
- 1
- Terminal Position :
- Dual
- FET Type :
- P-Channel
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation-Max :
- 1.6W Ta 2.8W Tc
- Datasheets
- SI1443EDH-T1-GE3
P-Channel Tape & Reel (TR) 54m Ω @ 4.3A, 10V ±12V 28nC @ 10V 30V 6-TSSOP, SC-88, SOT-363
SI1443EDH-T1-GE3 Overview
This device's continuous drain current (ID) is 4A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 4A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 1.8 μs, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 40 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
SI1443EDH-T1-GE3 Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 1.8 μs
a 30V drain to source voltage (Vdss)
SI1443EDH-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI1443EDH-T1-GE3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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