SI1442DH-T1-GE3

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Mfr.Part #
SI1442DH-T1-GE3
Manufacturer
Vishay
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
MOSFET N-CH 12V 4A SC70-6
Stock
35,076
In Stock :
35,076

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
4A Ta
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 8V
Width :
1.35mm
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
20m Ω @ 6A, 4.5V
Drain to Source Breakdown Voltage :
12V
FET Type :
N-Channel
Turn-Off Delay Time :
22 ns
REACH SVHC :
Unknown
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Package / Case :
6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ Id :
1V @ 250μA
Number of Channels :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
14 Weeks
Number of Pins :
6
Mounting Type :
Surface Mount
Packaging :
Digi-Reel®
Weight :
28.009329mg
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
8V
Turn On Delay Time :
8 ns
Radiation Hardening :
No
Element Configuration :
Single
Power Dissipation-Max :
1.56W Ta 2.8W Tc
Power Dissipation :
1.56W
Vgs (Max) :
±8V
Length :
2.2mm
Nominal Vgs :
400 mV
Series :
TrenchFET®
ECCN Code :
EAR99
Mount :
Surface Mount
Continuous Drain Current (ID) :
4A
Height :
1mm
Published :
2013
Input Capacitance (Ciss) (Max) @ Vds :
1010pF @ 6V
Datasheets
SI1442DH-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI1442DH-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:6-TSSOP, SC-88, SOT-363, Number of Channels:1, Number of Pins:6, Mounting Type:Surface Mount, SI1442DH-T1-GE3 pinout, SI1442DH-T1-GE3 datasheet PDF, SI1442DH-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI1442DH-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI1442DH-T1-GE3


N-Channel Digi-Reel® 20m Ω @ 6A, 4.5V ±8V 1010pF @ 6V 33nC @ 8V 6-TSSOP, SC-88, SOT-363

SI1442DH-T1-GE3 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1010pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4A amps.In this device, the drain-source breakdown voltage is 12V and VGS=12V, so the drain-source breakdown voltage is 12V in this case.It is [22 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).

SI1442DH-T1-GE3 Features


a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 22 ns


SI1442DH-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI1442DH-T1-GE3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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