SI1433DH-T1-E3
- Mfr.Part #
- SI1433DH-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 1.9A SC70-6
- Stock
- 24,176
- In Stock :
- 24,176
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- Unknown
- ECCN Code :
- EAR99
- Number of Pins :
- 6
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Delay Time :
- 11 ns
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 2.2A, 10V
- Threshold Voltage :
- -3V
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Fall Time (Typ) :
- 17 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 4.5V
- Power Dissipation :
- 950mW
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation-Max :
- 950mW Ta
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 1.9A Ta
- Turn-Off Delay Time :
- 18 ns
- Rise Time :
- 17ns
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 3V @ 100μA
- Pin Count :
- 6
- FET Type :
- P-Channel
- Published :
- 2015
- Continuous Drain Current (ID) :
- -2.2A
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 6
- Series :
- TrenchFET®
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Resistance :
- 150mOhm
- Nominal Vgs :
- -3 V
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Datasheets
- SI1433DH-T1-E3
P-Channel Tape & Reel (TR) 150m Ω @ 2.2A, 10V ±20V 5nC @ 4.5V 6-TSSOP, SC-88, SOT-363
SI1433DH-T1-E3 Overview
The drain current is the maximum continuous current the device can conduct, and this device has -2.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 18 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is -3V, which means that it will not activate any of its functions when its threshold voltage reaches -3V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SI1433DH-T1-E3 Features
a continuous drain current (ID) of -2.2A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns
a threshold voltage of -3V
SI1433DH-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1433DH-T1-E3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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