SI1431DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

950mW

Published :

2010

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

10 ns

Pin Count :

6

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

1.7A

Number of Terminations :

6

Series :

TrenchFET®

Element Configuration :

Single

Factory Lead Time :

6 Weeks

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

6

Rise Time :

40ns

Drain-source On Resistance-Max :

0.2Ohm

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

950mW Ta

Rds On (Max) @ Id, Vgs :

200m Ω @ 2A, 10V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 100μA

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Package / Case :

6-TSSOP, SC-88, SOT-363

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

40 ns

Drain to Source Breakdown Voltage :

30V