SI1427EDH-T1-GE3
- Mfr.Part #
- SI1427EDH-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 2A SC70-6
- Stock
- 21,070
- In Stock :
- 21,070
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Number of Channels :
- 1
- Rds On (Max) @ Id, Vgs :
- 64m Ω @ 3A, 4.5V
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 2.3 μs
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.56W
- Threshold Voltage :
- -400mV
- Drain to Source Breakdown Voltage :
- -20V
- Terminal Position :
- Dual
- Pin Count :
- 6
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±8V
- Power Dissipation-Max :
- 1.56W Ta 2.8W Tc
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.35mm
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 8V
- Series :
- TrenchFET®
- Drain Current-Max (Abs) (ID) :
- 2A
- Continuous Drain Current (ID) :
- 2A
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- FET Type :
- P-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Rise Time :
- 400ns
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 20V
- Length :
- 2.2mm
- Terminal Form :
- Gull wing
- Packaging :
- Digi-Reel®
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Turn On Delay Time :
- 90 ns
- Factory Lead Time :
- 14 Weeks
- Number of Terminations :
- 6
- Transistor Element Material :
- SILICON
- Number of Pins :
- 6
- REACH SVHC :
- No SVHC
- Published :
- 2012
- Gate to Source Voltage (Vgs) :
- 8V
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- Radiation Hardening :
- No
- Height :
- 1mm
- Turn-Off Delay Time :
- 5.2 µs
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SI1427EDH-T1-GE3
P-Channel Digi-Reel® 64m Ω @ 3A, 4.5V ±8V 21nC @ 8V 20V 6-TSSOP, SC-88, SOT-363
SI1427EDH-T1-GE3 Overview
Its continuous drain current is 2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.Its drain current is 2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 5.2 μs.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 90 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -400mV.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4.5V) to reduce its overall power consumption.
SI1427EDH-T1-GE3 Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 5.2 μs
a threshold voltage of -400mV
a 20V drain to source voltage (Vdss)
SI1427EDH-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI1427EDH-T1-GE3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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