SI1422DH-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Transistor Element Material :

SILICON

Resistance :

26mOhm

Element Configuration :

Single

Turn-Off Delay Time :

20 ns

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Rds On (Max) @ Id, Vgs :

26m Ω @ 5.1A, 4.5V

Mount :

Surface Mount

Transistor Application :

SWITCHING

Number of Pins :

6

Power Dissipation :

1.56W

RoHS Status :

ROHS3 Compliant

Published :

2014

FET Type :

N-Channel

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-609 Code :

e3

Weight :

7.512624mg

Lead Free :

Lead Free

Terminal Form :

Gull wing

Fall Time (Typ) :

10 ns

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Package / Case :

6-TSSOP, SC-88, SOT-363

Vgs (Max) :

±8V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

8V

Continuous Drain Current (ID) :

4A

REACH SVHC :

Unknown

Nominal Vgs :

400 mV

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Pbfree Code :

yes

Turn On Delay Time :

10 ns

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

725pF @ 6V

Drain to Source Breakdown Voltage :

12V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 8V

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.56W Ta 2.8W Tc

Terminal Position :

Dual

Radiation Hardening :

No

Rise Time :

10ns